Long-wavelength interface modes in semiconductor layer structures
Long-wavelength interface modes in semiconductor layer structures
复制标题
半导体层结构中的长波长界面模式
DOI：
10.1103/physrevb.71.035324
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发表时间：
2005
影响因子：
3.7
通讯作者：
J. Šik
中科院分区：
文献类型：
--
作者：
M. Schubert;T. Hofmann;J. Šik
我们的地址和解释发生在锌-铌族-III-V族半导体层结构中的体模和界面模的椭圆偏振光谱在红外波长观察。通过求解极性半导体层结构的表面极化激元色散关系，给出了Fano-Brewster型横磁sp-极化界面模和横电ss-极化表面引导界面模.我们表明，Berreman效应fD。W. Berreman，Phys.Rev.130，2193 s1963 dg与Fano界面极化激元的出现有关。实验验证表明，GaAs同质结构，它由不同的Te掺杂的n型衬底覆盖未掺杂的外延层。
We address and explain the occurrence of bulk and interface modes in zinc-blende group-III–group-V semiconductor layer structures observed by spectroscopic ellipsometry at infrared wavelengths. Fanoand Brewster-type transverse-magnetic sp-polarizedd interface modes as well as transverse-electric ss-polarizedd surface-guided interface modes are assigned by solutions of the surface polariton dispersion relations for polar semiconductor layer structures. We show that the Berreman-effect fD. W. Berreman, Phys. Rev. 130, 2193 s1963dg is associated with the occurrence of a Fano-interface polariton. Experimental verification is demonstrated for a GaAs homostructure, which consists of differently Te-doped n-type substrates covered by undoped epilayers.