Recent advances in ZnO transparent thin film transistors
Recent advances in ZnO transparent thin film transistors
复制标题
DOI：
10.1016/j.tsf.2005.01.066
复制
发表时间：
2005-09-01
期刊：
影响因子：
2.1
通讯作者：
Martins, R
中科院分区：
文献类型：
--
作者：
Fortunato, E;Barquinha, P;Martins, R
氧化锌是一种著名的宽禁带半导体材料(室温下晶态为3.4 eV)，具有许多应用，如透明导体、压敏电阻、表面声波、气体传感器、压电换能器和紫外线探测器。最近，由于它可能应用于薄膜晶体管，它引起了相当大的关注。在这篇文章中，我们介绍了一些最近已经获得的结果以及我们实验室正在开发的那些结果。这些新型薄膜晶体管的主要优势是结合了在室温下产生的高沟道迁移率和透明度，这使得这些薄膜晶体管成为下一代隐形和柔性电子产品的一种非常有前途的低成本器件。此外，用于制造该器件的加工工艺相对简单，并且与廉价的塑料/柔性衬底技术兼容。(C)2005 Elsevier B.V.保留所有权利。
Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology. (C) 2005 Elsevier B.V. All rights reserved.