Influence of step-edge barriers on the morphological relaxation of nanoscale ripples on crystal surfaces.
Influence of step-edge barriers on the morphological relaxation of nanoscale ripples on crystal surfaces.
复制标题
阶梯边缘势垒对晶体表面纳米级波纹形态弛豫的影响。
DOI:
10.1103/physrevlett.92.256101
复制
发表时间:
2004
影响因子:
8.6
通讯作者:
E. Chason
中科院分区:
文献类型:
--
作者:
V. Shenoy;A. Ramasubramaniam;H. Ramanarayan;D. Tambe;W. Chan;E. Chason
We show that the decay of sinusoidal ripples on crystal surfaces, where mass transport is limited by the attachment and detachment of atoms at the step edges, is remarkably different from the decay behavior that has been reported until now. Unlike the decreasing or at most constant rate of amplitude decay of sinusoidal profiles observed in earlier work, we find that the decay rate increases with decreasing amplitude in this kinetic regime. The rate of shape invariant amplitude relaxation is shown to be inversely proportional to both the square of the wavelength and the current amplitude. We have also carried out numerical simulations of the relaxation of realistic sputter ripples.