Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes
Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes
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DOI：
10.1088/1009-1963/12/3/313
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发表时间：
2003-03
期刊：
影响因子：
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通讯作者：
Shou-Guo Wang;Lin-An Yang;Yimen Zhang;Yu-Ming Zhang;Zhi-Yong Zhang;Jun-Feng Yan
中科院分区：
文献类型：
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作者：
Shou-Guo Wang;Lin-An Yang;Yimen Zhang;Yu-Ming Zhang;Zhi-Yong Zhang;Jun-Feng Yan
本文介绍了横向Ti/4 H-SiC肖特基势垒二极管（SBD）的制备和特性。采用氮离子注入法在p型4 H-SiC外延层中制备了SBD。使用蒙特卡罗模拟器TRIM模拟注入深度分布。反向I-V特性的测量证明了低反向电流，这对于许多基于SiC的器件（例如SiC金属半导体场效应晶体管和SiC静电感应晶体管）来说是足够好的。二极管的参数是从正向I-V特性中提取的。Ti/4 H-SiC的势垒高度B为0.95 eV。
This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs). SBDs are fabricated by nitrogen ion implantation into p-type 4H-SiC epitaxial layer. The implant depth profile is simulated using the Monte Carlo simulator TRIM. Measurements of the reverse I-V characteristics demonstrate a low reverse current, that is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors and SiC static induction transistors. The parameters of the diodes are extracted from the forward I-V characteristics. The barrier height ϕb of Ti/4H-SiC is 0.95 eV.