Study of the stepwise oxidation and nitridation of Si(111): Electron stimulated desorption, Auger spectroscopy, and electron loss spectroscopy
Study of the stepwise oxidation and nitridation of Si(111): Electron stimulated desorption, Auger spectroscopy, and electron loss spectroscopy
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Si(111)的逐步氧化和氮化研究：电子受激解吸、俄歇能谱和电子损失能谱
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发表时间：
1983
期刊：
影响因子：
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通讯作者：
J. Houston
中科院分区：
文献类型：
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作者：
M. Knotek;J. Houston
电子刺激解吸、俄歇线形状分析和电子损失光谱测量报告了 Si(111) 表面的电子激活逐步氧化和氮化。在 ESD 中，发现可能存在大量的表面氢，这可能导致氧化时形成羟基。富含羟基的薄膜在电子束中不稳定，而用活性氧氧化的表面（不形成 OH）则稳定得多。即使总是发现太多的氢，氮化膜在电子束中总是稳定的。在不含 OH 的氧化物上，ESD 显示出两种化学性质不同的 O 物质，一种被认为是 SiO2，另一种被认为是吸附的 O2 或化学中间体。氧化物和氮化物的 Si(L23VV) 俄歇光谱均通过背景扣除、积分、解卷积和扣除光谱的元素部分进行处理，作为一系列良好控制的反应步骤中反应时间的函数。两者的俄歇光谱...
Electron stimulated desorption, Auger line shape analysis, and electron loss spectroscopy measurements are reported for the electron activated stepwise oxidation and nitridation of the Si(111) surface. In ESD it is found that appreciable levels of surface hydrogen can be present which can lead to hydroxyl formation upon oxidation. The hydroxyl rich films are unstable in an electron beam, while surfaces oxidized with activated oxygen, where no OH is formed, are much more stable. The nitrided films are always stable in the electron beam even though there too hydrogen is always found. On the OH‐free oxide, ESD shows two chemically distinct O species, one thought to be SiO2 and the other adsorbed O2 or a chemical intermediate. The Si(L23VV) Auger spectra for both the oxide and nitride are treated by background subtraction, integration, deconvolution, and subtraction of the elemental part of the spectrum, as a function of reaction time over a well controlled series of reaction steps. The Auger spectra for both...