Microwave Dielectric Properties of Dy2O3 Substituted BiNbO4 Ceramics
Microwave Dielectric Properties of Dy2O3 Substituted BiNbO4 Ceramics
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Dy2O3 取代 BiNbO4 陶瓷的微波介电性能
DOI：
10.1143/jjap.45.5865
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发表时间：
2006
影响因子：
1.5
通讯作者：
Y. Oh
中科院分区：
文献类型：
--
作者：
Hyuk;Y. Oh
研究了Dy 3+取代量（0≤x≤0.1）对Bi 1-xDyxNbO 4陶瓷微波介电性能的影响。在低温（900-960 °C）下制备的Bi 1-xDyxNbO 4组合物。在整个烧结温度范围内，所有Bi 1-xDyxNbO 4成分中都得到了单一的斜方晶（α-BiNbO 4）相。Bi_（1-x）Dy_xNbO_4陶瓷的介电常数随着Dy含量的增加而降低，这是由于Dy取代Bi位后极化率降低所致。谐振频率温度系数的降低是由于氧八面体的畸变。
The microwave dielectric properties of Bi1-xDyxNbO4 ceramics were investigated as a function of Dy3+ substitution (0≤x≤0.1). Bi1-xDyxNbO4 compositions prepared at low temperatures (900–960 °C). A single orthorhombic (α-BiNbO4) phase in all Bi1-xDyxNbO4 compositions was obtained for the whole sintering temperature range. The decrease in the dielectric constant of the Bi1-xDyxNbO4 ceramics with increasing Dy content is attributed to the decrease in polarizability as Dy is substituted to the Bi site. The decrease in the temperature coefficient of the resonant frequency is due to the distortion of the oxygen octahedra.