Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
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DOI：
10.1103/physrevb.82.195309
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发表时间：
2010-10
影响因子：
3.7
通讯作者：
Xiulai Xu;A. Irvine;Yang Yang-Yang;Xitian Zhang;D. Williams
中科院分区：
文献类型：
--
作者：
Xiulai Xu;A. Irvine;Yang Yang-Yang;Xitian Zhang;D. Williams
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.
