Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver
Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver
复制标题
DOI：
10.1063/1.4906760
复制
发表时间：
2015-01
影响因子：
3.2
通讯作者：
D. Suzuki;T. Hanyu
中科院分区：
文献类型：
--
作者：
D. Suzuki;T. Hanyu
一种非易失性触发器（NV-FF），可以在提出电力之前最大程度地减少备份能量。使用连续电压监视的自终止写驱动器的使用使自动写入终止能够在书写所需数据后立即执行，从而节省大量能源。此外，通过利用单端电路以及对称写入电流路径结构，非易失性存储函数和自终端都被紧凑地嵌入NV-FF中，而不会降解。结果，与常规磁性隧道连接（MTJ）基于无自终止的常规磁性隧道连接（MTJ）的平均值相比，备用能量降低了83％。还表明，与传统的基于MTJ的NV-FF和自终端相比，总晶体管数量减少了43％。
A nonvolatile flip-flop (NV-FF) that makes it possible to minimize the backup energy before power-off is proposed. The use of a self-terminated write driver with continuous voltage monitoring enables automatic write-current termination to be performed immediately after the desired data are written, resulting in great energy saving. Moreover, by utilizing single-ended circuitry together with a symmetrical write current path structure, both a nonvolatile storage function and self-termination are compactly embedded in the NV-FF without performance degradation. As a result, the backup energy is reduced by 83% compared to that of the average of conventional magnetic tunnel junction (MTJ)-based NV-FFs with no self-termination. It is also demonstrated that total transistor counts are reduced by 43% compared to a conventional MTJ-based NV-FF with self-termination.