Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique
Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique
复制标题
传递模塑技术制造的金刚石尖头场发射器阵列的发射特性
DOI：
10.1116/1.589608
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发表时间：
1997
影响因子：
1.4
通讯作者：
M. Oh
中科院分区：
文献类型：
--
作者：
Seong;B. Ju;Yun‐Hi Lee;B. S. Park;Y. Baik;Sungkyoo Lim;M. Oh
制备了楔形金刚石尖端场发射阵列并进行了表征。通过使用硅模具制造的金刚石发射器的尖端半径为约300 A。金刚石针尖场发射阵列的最大电流密度为800 μA/cm ~ 2，阈值电压为600 V，其电学特性优于平面金刚石薄膜。研究了真空度对发射特性的影响。相对于平坦金刚石膜，金刚石尖端场致发射器阵列的发射特性在宽范围的真空压力上没有变化。
Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.