Principle of proximity: Plasmonic hot electrons motivate donator-adjacent semiconductor defects with enhanced electrocatalytic hydrogen evolution
Principle of proximity: Plasmonic hot electrons motivate donator-adjacent semiconductor defects with enhanced electrocatalytic hydrogen evolution
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DOI：
10.1016/j.nanoen.2019.03.093
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发表时间：
2019
期刊：
影响因子：
17.6
通讯作者：
Nian Bing Li
中科院分区：
文献类型：
--
作者：
Bang Lin Li;Hao Lin Zou;Jie Kang Tian;Guo Chen;Xiao Hu Wang;Huan Duan;Xiao Lin Li;Yan Shi;Jing Rong Chen;Ling Jie Li;Jing Lei Lei;Hong Qun Luo;Nian Bing Li
