Simulation Design of Normally-off AlGaN/GaN High-electron-mobility Transistors with p-GaN Schottky Hybrid Gate
Simulation Design of Normally-off AlGaN/GaN High-electron-mobility Transistors with p-GaN Schottky Hybrid Gate
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DOI：
10.1088/1674-1056/ac3739
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发表时间：
2021
影响因子：
1.7
通讯作者：
Yue Hao
中科院分区：
文献类型：
--
作者：
Yun-Long He;Fang Zhang;Kai Liu;Yue-Hua Hong;Xue-Feng Zheng;Chong Wang;Xiao-Hua Ma;Yue Hao
