Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods
Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods
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DOI：
10.1103/physrevb.81.085125
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发表时间：
2010-02
影响因子：
3.7
通讯作者：
M. Magnuson;M. Mattesini;C. Hoglund;J. Birch;L. Hultman
中科院分区：
文献类型：
--
作者：
M. Magnuson;M. Mattesini;C. Hoglund;J. Birch;L. Hultman
用N1s软X射线吸收谱和N-K、Ga-M1和Ga-M2，3发射谱研究了纤锌矿-GaN的电子结构和化学键，并与纯GaN进行了比较。
The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure G ...