Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
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基于一阶段共蒸发工艺的基底温度对 CIGS 薄膜结构和电学性能的影响
DOI：
10.1088/0268-1242/25/5/055007
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发表时间：
2010-05-01
影响因子：
1.9
通讯作者：
Sun, Y.
中科院分区：
文献类型：
--
作者：
Wang, H.;Zhang, Y.;Sun, Y.
在350 ~ 550℃的衬底温度下，采用一段共蒸发法制备Cu(In, Ga)Se-2薄膜，并用x射线衍射仪（XRD）、扫描电镜（SEM）和霍尔效应测量对薄膜的结构和电学性能进行了研究。实验结果表明，450℃的温度是单段法生长CIGS薄膜的关键温度。在此温度以下，发现具有高电阻率的（In, Ga）(2)Se-3相。较高的T-sub将导致形成晶粒尺寸更大、电性能更好的单相CIGS薄膜。CIGS薄膜载流子浓度高、电阻率低的主要原因是玻璃衬底中钠的掺入和（In, Ga）(2)Se-3相的消失。此外，随着T-sub的增加，CIGS太阳能电池的性能显著提高。这主要是由于在500℃以上的T-sub温度下，晶界复合减少，外加的（In, Ga）(2)Se-3相与CuxSey二元相充分反应所致。
Cu(In, Ga)Se-2 thin films were deposited on Mo/soda-lime glass substrates by the one-stage co-evaporation process at the substrate temperatures (T-sub) from 350 degrees C to 550 degrees C. The structural and electrical properties of CIGS films have been studied by x-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement. The experimental results indicate that a temperature of 450 degrees C is critical for CIGS films grown by the one-stage process. The (In, Ga)(2)Se-3 phase with high resistivity is found below this temperature. The higher T-sub will lead to the formation of single-phase CIGS films with larger grain size and better electrical properties. A higher carrier concentration and lower resistivity of CIGS films are ascribed to sodium incorporation diffused from the glass substrate and the disappearance of the (In, Ga)(2)Se-3 phase in CIGS films. Additionally, the performance of the CIGS solar cells improves significantly with the increase of T-sub. It can be attributed to the reduction of the grain-boundary recombination and the sufficient reaction between the additional (In, Ga)(2)Se-3 phase and the CuxSey binary phase at T-sub above 500 degrees C.