Impact of carrier-carrier scattering and carrier heating on pulse train dynamics of quantum dot semiconductor optical amplifiers
Impact of carrier-carrier scattering and carrier heating on pulse train dynamics of quantum dot semiconductor optical amplifiers
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DOI：
10.1063/1.3643048
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发表时间：
2011-09-26
影响因子：
4
通讯作者：
Schoell, Eckehard
中科院分区：
文献类型：
--
作者：
Majer, Niels;Luedge, Kathy;Schoell, Eckehard
研究了载流子-载流子散射对量子点半导体光放大器增益恢复动力学的影响。基于半导体Bloch方程和微观计算的载流子储层和量子点之间的库仑散射率的模拟结果表明，在一定注入电流范围内，泵浦-探针动力学与实验结果非常吻合。根据显微镜下得到的散射速率，我们可以得出结论，二维载流子库和量子点之间的快速级联弛豫过程与载流子加热相结合，增强了散射效率，驱动了基于量子点的半导体器件中观察到的超快增益恢复。(C) 2011年美国物理研究所。(doi: 10.1063/1.3643048)
We investigate the impact of carrier-carrier scattering on the gain recovery dynamics of a quantum dot (QD) semiconductor optical amplifier. Simulations, based on semiconductor Bloch equations with microscopically calculated Coulomb scattering rates between the carrier reservoir and the QDs, show a very good agreement with experimentally obtained pump-probe dynamics over a range of injection currents. With the microscopically obtained scattering rates at hand, we can conclude that fast cascading relaxation processes between the two-dimensional carrier reservoir and the QDs in combination with carrier heating enhancing the scattering efficiency drives the ultrafast gain recovery observed in QD based semiconductor devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643048]