Low Bandgap InAs-Based Thermophotovoltaic Cells for Heat-Electricity Conversion
Low Bandgap InAs-Based Thermophotovoltaic Cells for Heat-Electricity Conversion
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DOI：
10.1007/s11664-016-4373-0
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发表时间：
2016-02
影响因子：
2.1
通讯作者：
A. Krier;M. Yin;A. Marshall;S. Krier
中科院分区：
文献类型：
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作者：
A. Krier;M. Yin;A. Marshall;S. Krier
热光伏（TPV）电池，它可以直接将热量转化为电能的实际实现，是相当大的技术兴趣。然而，大多数现有的TPV电池需要温度为1800°C的热源。在这里，我们报告了一种基于InAs的低带隙中红外电池，并在500-950°C的温度范围内使用热源演示了TPV操作。最大开路电压（Voc）和短路电流密度（Jsc）在黑体温度为950°C和入射功率密度为720 mW cm− 2的情况下测量为0.06 V和0.89 A cm− 2，没有涂层或电极优化。TPV操作是在低至500°C的温度下利用热源获得的，这代表了向能量清除和废热回收应用的进展。
The practical realization of thermophotovoltaic (TPV) cells, which can directly convert heat into electric power, is of considerable technological interest. However, most existing TPV cells require heat sources at temperatures of ∼1800°C. Here we report a low bandgap mid-infrared cell based on InAs and demonstrate TPV operation with heat sources at temperatures in the range 500–950°C. The maximum open circuit voltage (Voc) and short circuit current density (Jsc) were measured as 0.06 V and 0.89 A cm−2for a blackbody temperature of 950°C and an incident power density of 720 mW cm−2without antireflection coating or electrode optimisation. TPV operation was obtained with heat sources at temperatures as low as 500°C, which represents progress towards energy scavenging and waste heat recovery applications.