Spontaneous n-Doping in Growing Monolayer MoS2 by Alkali Metal Compound-Promoted CVD
Spontaneous n-Doping in Growing Monolayer MoS2 by Alkali Metal Compound-Promoted CVD
复制标题
通过碱金属化合物促进的 CVD 生长单层 MoS2 中的自发 n 掺杂
DOI:
10.1021/acsami.1c17409
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发表时间:
2021
期刊:
影响因子:
--
通讯作者:
Bo Gao
中科院分区:
文献类型:
--
作者:
Peng Wang;Jiafan Qu;Yadong Wei;Hongyan Shi;Jian Wang;Xiudong Sun;Weiqi Li;Wenjun Liu;Bo Gao
Monolayer MoS2has emerged as one of the most promising candidate materials for future semiconductor devices because of its fascinating physical properties and optoelectronic performance. Recently, the utilization of alkali metal compounds as promoters in CVD growth has been demonstrated to be a facile strategy for growing monolayer MoS2and other 2D TMDs with large domain sizes. In this work, we systematically investigated the residues derived from alkali metal compounds and the spontaneous n-doping effect on monolayer MoS2in alkali metal compound-promoted CVD growth. When using NaOH and other alkali metal compounds as promoters, it is found that the Raman peak of the A1gmode red shifted with a broadening width and the PL intensity of the A peak decreased with a red shift, which was attributed to the spontaneous n-doping effect during growth. Moreover, the growth using varying amounts of NaOH promoter suggests that the n-doping level could be controlled by the amount of promoter. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectroscopy (TOF-SIMS) showed the existence of cation-derived residues in the form of a Na–O cluster physiosorbed on top of monolayer MoS2, which was also confirmed by the transfer experiment. The NaOH treatment experiment and density functional theory (DFT) calculations demonstrate that sodium hydroxide clusters, which could be converted from a combination of Na–O clusters and water vapor, could produce an n-doping effect on monolayer MoS2. This study provides a facile route to controllably grow monolayer 2D materials with a desired doping level without further treatment.