Incorporation of CdSe layers into CdTe thin film solar cells
Incorporation of CdSe layers into CdTe thin film solar cells
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DOI：
10.1016/j.solmat.2018.03.010
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发表时间：
2018-06-15
影响因子：
6.9
通讯作者：
Major, Jonathan D.
中科院分区：
文献类型：
--
作者：
Baines, Tom;Zoppi, Guillaume;Major, Jonathan D.
将 CdSe 层纳入 CdTe 薄膜太阳能电池最近已成为提高电池性能的一种途径。有人提出，Se 扩散后形成较低带隙的 CdTe(1-x)Se(x) 相会引起带隙分级，这可能会增加载流子寿命，从而增加开路电压。在本研究中，我们研究了 CdSe 掺入对 CdTe 太阳能电池性能的影响。我们证明，由于光学损耗较大，标准 CdS/CdTe 器件架构与 Se 的掺入不兼容。开发了一种替代电池结构，其氧化物伙伴层用 SnO2/CdSe/CdTe 代替 CdS，从而使电池效率 > 13.5%。通过额外的生长后退火带来的性能改进，研究了有效掺入硒所需的处理差异。最后，其他氧化物如 TiO2、ZnO 和 FTO 被证明是不合适的配合层，但强调配合层的选择是进一步提高性能的关键。
Incorporation of CdSe layers into CdTe thin film solar cells has recently emerged as a route to improve cell performance. It has been suggested that the formation of lower band gap CdTe(1-x)Se(x) phases following Se diffusion induces bandgap grading which may increase the carrier lifetime and thereby open circuit voltage. In this study we investigate the impact of CdSe incorporation on CdTe solar cell performance. We demonstrate that the standard CdS/CdTe device architecture is incompatible with Se incorporation, owing to large optical losses. An alternative cell structure with an oxide partner layer replacing the CdS with SnO2/CdSe/CdTe is developed, leading to cell efficiencies of > 13.5%. The differences in processing required for effective selenium incorporation are investigated with performance improvements resulting from additional post-growth annealing. Finally, other oxides such as TiO2, ZnO and FTO are demonstrated to be unsuitable partner layers but highlight that the choice of partner layer is key to further improving the performance.