Charge collection and trapping in low-temperature silicon detectors
Charge collection and trapping in low-temperature silicon detectors
复制标题
低温硅探测器中的电荷收集和捕获
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Betty A. Young
中科院分区：
文献类型：
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作者：
M. Penn;B. Dougherty;B. Cabrera;R. M. Clarke;Betty A. Young
硅探测器在低温（T<0.5 K）和低外加电场（E=0.1-100 V/cm）下的电荷收集效率测量使用各种高纯度p型硅样品进行，室温电阻率在2-40 kΩ cm范围内。在这些低温和低电场条件下的良好电荷收集对于背景抑制是必要的，通过同时测量声子和电离，在非常低的事件率暗物质搜索或中微子物理实验中。在一些样品中存在由于漂移过程中捕获而导致的电荷损失，但数据表明另一种电荷损失机制也很重要。我们提出的结果表明，对于60 keV的能量沉积，捕获的总电荷损失的一个显着的部分发生在事件位置附近的初始电子空穴云，这可能会短暂地作为一个屏蔽，无场区域。此外，横向尺寸的测量，横向于所施加的电场…
Charge collection efficiency measurements in silicon detectors at low temperature (T<0.5 K) and low applied electric field (E=0.1–100 V/cm) were performed using a variety of high‐purity, p‐type silicon samples with room‐temperature resistivity in the range 2–40 kΩ cm. Good charge collection under these conditions of low temperature and low electric field is necessary for background suppression, through the simultaneous measurement of phonons and ionization, in a very low event rate dark matter search or neutrino physics experiment. Charge loss due to trapping during drift is present in some samples, but the data suggest that another charge–loss mechanism is also important. We present results which indicate that, for 60 keV energy depositions, a significant fraction of the total charge loss by trapping occurs in the initial electron‐hole cloud near the event location which may briefly act as a shielded, field‐free region. In addition, measurements of the lateral size, transverse to the applied electric fie...