Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum well
Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum well
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DOI：
10.1364/opex.13.009460
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发表时间：
2005-11-14
期刊：
影响因子：
3.8
通讯作者：
Bowers, JE
中科院分区：
文献类型：
--
作者：
Park, H;Fang, AW;Bowers, JE
一种新型的激光器，利用硅波导键合到AlGaInAs量子威尔斯的演示。这种晶圆级制造方法允许光波导由CMOS兼容的硅工艺限定，而光增益由III-V族材料提供。采用低温氧等离子体辅助晶片键合将AlGaInAs量子阱结构键合到硅晶片上。光泵1538 nm激光器的脉冲阈值为30 mW，输出功率为1.4 mW。(c)2005年，美国光学学会。
A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW. (c) 2005 Optical Society of America.