Effect of CuI Layer on Photoelectrochemistry of Cu2O Films
Effect of CuI Layer on Photoelectrochemistry of Cu2O Films
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CuI 层对 Cu2O 薄膜光电化学的影响
DOI：
10.1149/2.1241709jes
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发表时间：
2017
影响因子：
3.9
通讯作者：
Run Liu
中科院分区：
文献类型：
--
作者：
Kedan Lu;Qinyan Lu;Jie Zhang;Jianying Gong;Run Liu
在室温和pH为3的2 mM KI中，通过吸附I−离子，在电沉积cu2o薄膜上沉积了薄薄的CuI层，并研究了其对cu2o光电化学性能的影响。电沉积cu2o表现为（100）优先取向，化学沉积CuI表现为（111）优先取向。XPS结果表明，cu2o /CuI电极表面以Cu+价态为主，而不是cu2 +价态为主。当CuI层厚度达到最佳时，Cu 2o /CuI电极的光电响应将大大增强。研究了Cu 2o /CuI电极改善光响应的机理，认为可能是由于Cu 2o /CuI电极的平带正位移、更长的光生电子寿命、更好的电荷转移和更少的电荷复合。
Thin CuI layer has been deposited on the electrodeposited Cu 2 O film through adsorption I− ions in 2 mM KI at room temperature and pH 3 and its effect on the photoelectrochemical properties of Cu 2 O has been studied. The electrodeposited Cu 2 O shows (100) preferential orientation and the chemical deposited CuI shows (111) preferential orientation. XPS results show that the Cu+ valence state dominated on the surface of Cu 2 O/CuI electrode instead of Cu 2+ valence state dominated on the surface of Cu 2 O electrode. With optimum thickness of CuI layer, the photoelectrochemical response for Cu 2 O/CuI electrode is largely enhanced. The mechanism for the improvement of the photoresponse has been studied and could be due to positive shift of flatband, longer photogenerated electron lifetime, better charge transfer and less charge recombination for the Cu 2 O/CuI electrode.
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影响因子：
3.7
作者：
Paracchino, Adriana;Brauer, Jan Cornelius;Graetzel, Michael
通讯作者：
Graetzel, Michael
DOI：
10.1088/0022-3719/9/8/014
发表时间：
1976-01-01
期刊：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
影响因子：
--
作者：
HODBY, JW;JENKINS, TE;TRIVICH, D
通讯作者：
TRIVICH, D
影响因子：
15
作者：
Bisquert, J;Zaban, A;Mora-Seró, I
通讯作者：
Mora-Seró, I
影响因子：
3.3
作者：
Leng, WH;Zhang, Z;Cao, CN
通讯作者：
Cao, CN
影响因子：
3.9
作者：
Lefèvre, G;Walcarius, A;Bessière, J
通讯作者：
Bessière, J