Dissociation of grain boundary dislocations in SrBi2Ta2O9 ferroelectric thin films
Dissociation of grain boundary dislocations in SrBi2Ta2O9 ferroelectric thin films
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DOI：
10.1063/1.1388866
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发表时间：
2001-08
影响因子：
4
通讯作者：
Xinhua Zhu;Jianmin Zhu;Shunhua Zhou;Qi Li;Zhi-guo Liu;N. Ming
中科院分区：
文献类型：
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作者：
Xinhua Zhu;Jianmin Zhu;Shunhua Zhou;Qi Li;Zhi-guo Liu;N. Ming
本文报道了用脉冲激光沉积法在Pt/TiO 2/SiO2/Si（100）衬底上生长的c轴取向SrBi 2 Ta 2 O 9（SBT）铁电薄膜中晶界位错（GBD）的解离。小角度（8.2°）[001]倾斜晶界的边界面接近（110）面，表现出由堆垛层错分离的部分GBD。游离晶界结构的GBD和位错芯通道宽度小于弗兰克的几何规则预测的数量的两倍。在平衡时，部分位错之间的排斥弹性力被部分位错之间的堆垛层错形成所产生的吸引力平衡。基于此，层错能被评估为0.27-0.29 J/m2。讨论了SBT薄膜的漏电流与GBD解离的关系。
In this work, the dissociation of grain boundary dislocations (GBDs) is reported in SrBi2Ta2O9 (SBT) ferroelectric thin films with c-axis orientation grown by pulsed-laser deposition on Pt/TiO2/SiO2/Si(100) substrates. Small-angle (8.2°) [001] tilt grain boundaries with a boundary plane close to the (110) plane exhibit partial GBDs separated by stacking faults. The dissociated grain-boundary structures have twice the number of GBDs and interdislocation core channel width smaller than that Frank’s geometrical rule predicts. At the equilibrium, the repulsive elastic force between partial dislocations is balanced by an attractive force produced by the formation of a stacking fault between the partials. Based on this, the stacking fault energy is evaluated to be 0.27–0.29 J/m2. The relationship between the leakage current of SBT films and dissociation of GBDs is also discussed.