Quantum tunneling through planar p–n junctions in HgTe quantum wells
Quantum tunneling through planar p–n junctions in HgTe quantum wells
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DOI：
10.1088/1367-2630/12/8/083058
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发表时间：
2009-12
影响因子：
3.3
通讯作者：
L. B. Zhang;Kai Chang;X. Xie;H. Buhmann;L. Molenkamp
中科院分区：
文献类型：
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作者：
L. B. Zhang;Kai Chang;X. Xie;H. Buhmann;L. Molenkamp
我们证明了在碲化汞量子威尔斯阱中产生的p-n结具有有趣的带内和带间隧穿过程。我们发现了一个完美的带内传输的电子垂直注入的界面的p-n结。通过改变入射角、费米能级和Rashba自旋轨道相互作用（RSOI）强度，可以调节电子穿过p-n结的不透明度和透明度。在准一维（Q1 D）p-n结中由于拓扑边缘态的形成而出现的电导平台可以通过调节栅电压来打开和关闭。当样品表现出中等强度的RSOI时，自旋取向可以基本上旋转。
We demonstrate that a p–n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p–n junction. The opacity and transparency of electrons through the p–n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin–orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (Q1D) p–n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI.