Quantitative thermal probing of devices at sub-100 nm resolution
Quantitative thermal probing of devices at sub-100 nm resolution
复制标题
以亚 100 nm 分辨率对器件进行定量热探测
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
A. Majumdar
中科院分区：
文献类型：
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作者：
Li Shi;O. Kwon;Guanghua Wu;A. Majumdar
亚微米特性的局域焦耳加热影响了VLSI器件的可靠性。本文报道了使用批量制造的用于扫描热显微镜(SthM)的探头来表征小型化器件中的自加热。SthM技术的空间分辨率约为70 nm。验证了扫描过程中针尖和样品之间存在一层液膜，液桥的接触热导很大。在前人的工作中对探头的热设计进行了优化，并对其热性能进行了表征。我们应用SthM技术通过结构在直流电流加热下绘制了VLSI上的温度分布。由SthM技术得到的结果与由电阻测温方法得到的结果很好地吻合。本文还展示了一种新的定位地下热点的相位成像技术。亚表面成像技术有可能用于检测多电平互连中的缺陷。
Localized Joule heating in submicron features affects reliability of VLSI devices. This paper reports the use of batch-fabricated probes for scanning thermal microscopy (SThM) to characterize self-heating in miniaturized devices. The spatial resolution of the SThM technique is found to be about 70 nm. Existence of a liquid film bridging the tip and sample during scanning is verified and the thermal contact conductance of the liquid bridge is found to be significant. The thermal design of the probe was optimized in previous work and its thermal performance is now characterized. We apply the SThM technique for mapping temperature distribution on VLSI via structures under DC current heating. Excellent agreement was found between the results obtained from the SThM technique and that from a resistive thermometry method. This paper also demonstrates a novel phase imaging technique for locating subsurface hot spots. The subsurface imaging technique has the potential to be used for detecting defects in multilevel interconnects.