Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer
Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer
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DOI：
10.1016/j.orgel.2017.03.018
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发表时间：
2016-09
影响因子：
3.2
通讯作者：
Cuong Manh Tran;H. Sakai;Y. Kawashima;K. Ohkubo;S. Fukuzumi;H. Murata
中科院分区：
文献类型：
--
作者：
Cuong Manh Tran;H. Sakai;Y. Kawashima;K. Ohkubo;S. Fukuzumi;H. Murata
我们报道了使用并五苯半导体和锂离子封装的富勒烯（Li+@C60）作为电荷捕获层的多级非挥发性有机晶体管存储器。具有Si++/SiO2/Li+@C60/Cytop/Pentacene/Cu结构的存储器有机场效应晶体管（OFFET）表现出p型晶体管的性能，阈值电压（Vth）为-5.98 V，迁移率（μ）为0.84 cm 2 V-1 s-1。多电平存储器OFDs表现出近似10 V、16 V和32 V的存储器窗口（ΔVth），编程栅极电压为150 V，分别持续0.5 s、5 s和50 s，擦除栅极电压为−150 V，分别持续0.17 s、1.7 s和17 s。在我们的多级存储器中，四种逻辑状态可以清楚地区分，并且它的数据可以多次编程或擦除。在我们的OFFET中的多能级记忆效应归因于Li+@C60层的电子俘获能力。
We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li+@C60) as a charge trapping layer. Memory organic field-effect transistors (OFETs) with a Si++/SiO2/Li+@C60/Cytop/Pentacene/Cu structure exhibited a performance of p-type transistor with a threshold voltage (Vth) of −5.98 V and a mobility (μ) of 0.84 cm2V−1s−1. The multi-level memory OFETs exhibited memory windows (ΔVth) of approximate 10 V, 16 V, and 32 V, with a programming gate voltage of 150 V for 0.5 s, 5 s, and 50 s, and an erasing gate voltage of −150 V for 0.17 s, 1.7 s, and 17 s, respectively. Four logic states were clearly distinguishable in our multi-level memory, and its data could be programmed or erased many times. The multi-level memory effect in our OFETs is ascribed to the electron-trapping ability of the Li+@C60layer.