Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States
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DOI：
10.1109/led.2020.2997319
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发表时间：
2020-07-01
影响因子：
4.9
通讯作者：
Weber, W. M.
中科院分区：
文献类型：
--
作者：
Simon, Maik;Liang, B.;Weber, W. M.
我们展示了一种基于硅纳米线的自上而下制造的可重构场效应晶体管(RFET)，它可以被静电编程为p-和n-配置。与其他自上而下制造的RFET相比，该器件结合了传输特性的高度对称性、两种配置下的高通断电流比以及更高的电流密度。在导线内部形成两个NiSi2/Si肖特基结并单独选通。通过重复的SiO_2刻蚀和生长顺序和保形TiN沉积工艺制备了窄的omega栅沟道。对栅极和肖特基接触金属功函数以及肖特基结的氧化物压应力进行调整，以使栅极电压和漏极电压绝对值相同时，p电流仅比n电流高1.6倍。
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high ON/OFF current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.