Transmission electron microscopy study of Si nanowires
Transmission electron microscopy study of Si nanowires
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DOI：
10.1063/1.121945
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发表时间：
1998-07
影响因子：
4
通讯作者：
Guangwen Zhou;Ze Zhang;Z. Bai;S. Feng;Dapeng Yu
中科院分区：
文献类型：
--
作者：
Guangwen Zhou;Ze Zhang;Z. Bai;S. Feng;Dapeng Yu
通过透射电子显微镜研究了使用激光烧蚀合成的硅纳米线（SiNW）的微观结构。 SiNW具有高密度的结构缺陷，这可能在SiNW的形成和纳米线形貌的确定中发挥重要作用。根据观察结果讨论了 SiNW 生长机制的模型。
Microstructures of Si nanowires (SiNW’s) synthesized using laser ablation were investigated by transmission electron microscopy. The SiNW’s have a high density of structural defects, which may play an important role in the formation of SiNW’s and in the determination of the morphology of the nanowires. A model for the growth mechanism of the SiNW’s was discussed on the basis of the observation.