A Novel Characterization Method for Thermal Thin-Film Properties Applied toPECVD Silicon Nitride
A Novel Characterization Method for Thermal Thin-Film Properties Applied toPECVD Silicon Nitride
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应用于 PECVD 氮化硅的热薄膜特性表征新方法
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
B. Jakoby
中科院分区：
文献类型：
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作者：
R. Beigelbeck;F. Kohl;F. Keplinger;J. Kuntner;B. Jakoby
微机械传感器器件的设计、模拟和优化通常需要准确的薄膜热性能知识，例如PECVD-Si3N4。这些热学参数可能与散装材料声明的热学参数有很大不同，它们通常取决于工艺。基于微机械悬臂梁装置，我们开发了一种新的方法来测定这种薄膜的导热系数和热容。在这篇文章中，我们描述了一种新设计的测试装置以及相关的引出过程，并报告了对介质PECVD氮化硅薄膜的实验验证。
Design, simulation, and optimization of micromachined sensor devices often require accurate knowledge of thermal thin-film properties, e. g., for PECVD-Si3N4. These thermal parameters can differ considerably from those stated for bulk material and they are typically process-dependent. We developed a novel method to determine the thermal conductivity as well as the heat capacity of such thin-films based on a micromachined cantilever device. In this contribution, we describe a newly devised test device together with the associated extraction procedure and report on an experimental verification for a dielectric PECVD silicon nitride thin-film.