On the unusual electromigration behavior of copper interconnects
On the unusual electromigration behavior of copper interconnects
复制标题
关于铜互连的异常电迁移行为
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
M. Nathan
中科院分区：
文献类型：
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作者：
E. Glickman;M. Nathan
目前，在超大规模集成电路中，Cu替代Al作为导体材料的能力的不确定性源于Cu互连的令人困惑的电迁移行为：多晶粒线中的电迁移激活能通常比晶界扩散的电迁移激活能低约两倍，而电迁移率表达式中的指前因子比沿沿着晶界的电迁移。使用文献数据，特别是那些漂移速度实验，我们表明，无论这些不寻常的事实，晶界仍然是最有可能的主要电迁移扩散途径在铜互连。基于具有任意晶界通量的晶界开槽理论的最新进展[Klinger等人，J.Appl.Phys.78，3833（1995）]，以及将一般理论应用于电迁移的特定模型[Glickman，Phys.Low-Dim. 11/12，69（1994）]，我们解释了...
The present uncertainty in the ability of Cu to substitute for Al as the conductor material in very large scale integration arises from the perplexing electromigration behavior of Cu interconnects: the electromigration activation energy in multigrained lines is often about two times lower than for grain‐boundary diffusion, while the pre‐exponential factor in the electromigration rate expression is several orders of magnitude smaller than that characteristic of electromigration along grain boundaries. Using literature data, in particular those of drift velocity experiments, we show that regardless of these unusual facts, grain boundaries are still most likely the major electromigration diffusion pathways in Cu interconnects. Based upon recent progress in the theory of grain‐boundary grooving with an arbitrary grain‐boundary flux [Klinger et al. J. Appl. Phys. 78, 3833 (1995)], and the specific model applying the general theory to electromigration [Glickman, Phys. Low‐Dim. Struct. 11/12, 69 (1994)], we expl...