Effect of excess charge on band energetics (optical absorption edge and carrier redox potentials) in small semiconductor particles
Effect of excess charge on band energetics (optical absorption edge and carrier redox potentials) in small semiconductor particles
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DOI：
10.1021/j100345a069
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
Chong Liu;A. Bard
中科院分区：
文献类型：
--
作者：
Chong Liu;A. Bard
《物理化学杂志》由美国化学学会出版。1155第16街，华盛顿州，DC 20036额外电荷对小半导体粒子能带能量(光吸收边和载流子氧化还原电势)的影响。，93(8)，3232-3237.doi：10.1021/j100345a069于2009年2月2日从http://pubs.acs.org下载
The Journal of Physical Chemistry is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 Effect of excess charge on band energetics (optical absorption edge and carrier redox potentials) in small semiconductor particles Chong Yang Liu, and Allen J. Bard J. Phys. Chem., 1989, 93 (8), 3232-3237 • DOI: 10.1021/j100345a069 Downloaded from http://pubs.acs.org on February 2, 2009