Analysis of the growth of GaN epitaxy on silicon
Analysis of the growth of GaN epitaxy on silicon
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DOI：
10.1088/1674-4926/39/3/033006
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发表时间：
2018-03
影响因子：
5.1
通讯作者：
Danmei Zhao;Degang Zhao
中科院分区：
文献类型：
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作者：
Danmei Zhao;Degang Zhao
由于GaN基器件的巨大潜力，高质量无裂纹GaN的生长分析一直是研究的热点。本文研究了两种改善Si（111）衬底上GaN外延层性能的方法。样品A作为参考，仅在Si衬底和外延之间具有AlN缓冲层。在下面的两个样品中，GaN过渡层（样品B）和AlGaN缓冲层（样品C）分别生长在AlN缓冲层上。这两种方法都提高了GaN的质量。同时，使用第二种方法，残余拉伸热应力降低。为了进一步研究这两种引入层的影响，我们通过拉曼光谱研究了GaN外延层的应力状况。根据拉曼光谱，GaN外延层中计算的残余应力对于样品B约为0.72 GPa，对于样品C约为0.42 GPa。用室温PL谱研究了GaN外延层的光致发光特性。
Due to the great potential of GaN based devices, the analysis of the growth of crack-free GaN with high quality has always been a research hotspot. In this paper, two methods for improving the property of the GaN epitaxial layer on Si (111) substrate are researched. Sample A, as a reference, only has an AlN buffer between the Si substrate and the epitaxy. In the following two samples, a GaN transition layer (sample B) and an AlGaN buffer (sample C) are grown on the AlN buffer separately. Both methods improve the quality of GaN. Meanwhile, using the second method, the residual tensile thermal stress decreases. To further study the impact of the two introduced layers, we investigate the stress condition of GaN epitaxial layer by Raman spectrum. According to the Raman spectrum, the calculated residual stress in the GaN epitaxial layer is approximately 0.72 GPa for sample B and 0.42 GPa for sample C. The photoluminescence property of GaN epitaxy is also investigated by room temperature PL spectrum.