Lateral n–p junction for acoustoelectric nanocircuits
Lateral n–p junction for acoustoelectric nanocircuits
复制标题
声电纳米电路的横向 n-p 结
DOI：
10.1063/1.1773363
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发表时间：
2004
影响因子：
4
通讯作者：
A. Shields
中科院分区：
文献类型：
--
作者：
T. Hosey;V. I. Talyanskii;S. Vijendran;G. Jones;M. Ward;D. Unitt;C. E. Norman;A. Shields
我们报告的实验实现的设备包括一个横向的n-p结生长的聚焦离子分子束外延和换能器产生的表面声波。跨结的声电荷输运和伴随的光子发射被证明。这种类型的发光二极管适合于集成到声电纳米电路中，其中准维半导体通道用作“导线”，通过表面声波传输电荷包。二极管提供了一种将声电纳米电路的功能扩展到光域的方法。
We report the experimental realization of a device comprising a lateral n–p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of light-emitting diode is suitable for integration into acoustoelectric nanocircuits in which quasione-dimensional semiconductor channels serve as “wires” through which packets of charge are transported by surface acoustic waves. The diode provides a means by which to extend the functionality of acoustoelectric nanocircuits into the optical domain.
复合费米子的回旋共振
影响因子：
64.8
作者：
I.V. Kukushkin;J.H. Smet;K. von Klitzing;W. Wegscheider
通讯作者：
W. Wegscheider