OBSERVATION OF SURFACE RECONSTRUCTION ON SILICON ABOVE 800-DEGREES-C USING THE STM
OBSERVATION OF SURFACE RECONSTRUCTION ON SILICON ABOVE 800-DEGREES-C USING THE STM
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DOI：
10.1038/351215a0
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发表时间：
1991-05-16
期刊：
影响因子：
64.8
通讯作者：
IWATSUKI, M
中科院分区：
文献类型：
--
作者：
KITAMURA, S;SATO, T;IWATSUKI, M
了解晶体半导体薄膜的结构相变动力学对于控制分子束外延等技术中的薄膜生长以及高温下此类薄膜的应用非常重要。 电子衍射技术（LEED和RHEED）已被应用于高温表面重建的研究，但尽管这些可以检测表面周期性的变化，它们不允许原子尺度的成核和生长过程的分辨率。 扫描隧道显微镜（STM）提供了一个替代工具来研究这种变化，但高温观测一直受到热漂移问题的阻碍。 在这里，我们报告我们成功地克服了这些问题，从而获得原子分辨率的STM图像的1 × 1 -> 7 × 7表面重建的硅薄膜在约860 ℃。 台阶的形成和迁移在这些图像中清晰可见。
AN understanding of the kinetics of structural phase transitions in crystalline, semiconducting thin films is important for the control of film growth in techniques such as molecular-beam epitaxy, as well as in applications of such films at high temperatures. Electron diffraction techniques (LEED and RHEED) have been applied to the study of high-temperature surface reconstruction, but although these can detect changes in surface periodicity, they do not permit atomic-scale resolution of the nucleation and growth processes. The scanning tunnelling microscope (STM) provides an alternative tool to investigate changes of this sort, but high-temperature observations have been hampered by problems of thermal drift. Here we report our success in overcoming these problems and thus in obtaining atomic-resolution STM images of the 1 x 1 --> 7 x 7 surface reconstruction of a silicon thin film at about 860-degrees-C. Step formation and migration are clearly visible in these images.