The Influence of Nanoparticle Fillers on the Effectiveness of Phosphorus Diffusion Pastes
The Influence of Nanoparticle Fillers on the Effectiveness of Phosphorus Diffusion Pastes
复制标题
DOI：
10.1115/1.4031944
复制
发表时间：
2016-02
影响因子：
2.3
通讯作者：
R. Nüssl;J. Biba;D. Britton
中科院分区：
文献类型：
--
作者：
R. Nüssl;J. Biba;D. Britton
磷硅酸盐聚合物旋涂玻璃掺杂剂已被适配成使用不同类型的纳米颗粒作为功能添加剂来定量地改变浆料的掺杂强度来生产可丝网印刷的N型扩散浆料。在不同的组合物之间已经发现扩散后所得的磷浓度分布的强烈的定性和定量差异。如果使用硅纳米颗粒代替二氧化硅，不仅可获得中间掺杂水平，而且还实现了较浅的掺杂剂深度。通过P-N结太阳电池的制作和测试，研究了P型硅片表面扩散磷形成的层的电学质量。器件的开路电压分别为0.437 V和0.523 V，短路电流密度分别为1.88 mA/cm 2和4.78 mA/cm 2，具有二极管状的电流-电压（IV）特性，表明器件发射极的掺杂水平较低，结的串联电阻较高。
A phosphosilicate polymer spin-on glass dopant has been adapted to produce a screen printable N-type diffusion pastes using different types of nanoparticles as functional additives to quantitatively change the doping strength of the paste. Strong qualitative and quantitative differences in the resulting phosphorous concentration profiles after diffusion have been found between different compositions. Not only is an intermediate doping level obtainable if silicon nanoparticles are used instead of silica but also a shallower dopant depth is also achieved. The electrical quality of the layer formed by diffusing phosphorus into the surface of a P-type silicon wafer has been investigated by the fabrication and testing of P-N junction solar cells. The devices exhibit diodelike current–voltage (IV) characteristics with open-circuit voltages of 0.437 V and 0.523 V and short-circuit current densities of 1.88 mA/cm2and 4.78 mA/cm2indicating a low doping level of the cell emitter and a relatively high series resistance of the junction.