Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates -: art. no. 183504
Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates -: art. no. 183504
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DOI：
10.1063/1.2117622
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发表时间：
2005-10-31
影响因子：
4
通讯作者：
Pflaum, J
中科院分区：
文献类型：
--
作者：
de Oteyza, DG;Barrena, E;Pflaum, J
我们比较研究了在裸SiO_2和十八烷基三甲氧基硅烷(OTMS)功能化的SiO_2上生长的铜-十六氟酞菁(F16CuPc)薄膜。OTMS是一种表面能低于SiO_2的甲基封端分子层。我们发现OTMS对SiO_2的官能化导致了高度有序的F16CuPc微晶的形成。横向有序的扩展和随后晶界的减少导致由这些薄膜制成的薄膜晶体管中电子的场效应迁移率提高了近一个数量级。(C)2005年美国物理研究所。
We present a comparative study of copper-hexadecafluorophthalocyanine (F16CuPc) films grown on bare SiO2 and on SiO2 functionalized by octadecyltrimethoxisilane (OTMS), a methyl terminated molecular layer with a lower surface energy than SiO2. We show that the functionalization of SiO2 by OTMS leads to the formation of highly structurally ordered F16CuPc crystallites. The extended lateral order and subsequent reduction of grain boundaries result in an improved field-effect mobility for electrons by almost an order of magnitude in thin-film transistors made of these films. (C) 2005 American Institute of Physics.