DEFECT STRUCTURE AND ELECTRICAL-PROPERTIES OF SINGLE-CRYSTAL BA0.03SR0.97TIO3
DEFECT STRUCTURE AND ELECTRICAL-PROPERTIES OF SINGLE-CRYSTAL BA0.03SR0.97TIO3
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DOI：
10.1111/j.1151-2916.1988.tb05848.x
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发表时间：
1988-04-01
影响因子：
3.9
通讯作者：
TULLER, HL
中科院分区：
文献类型：
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作者：
CHOI, GM;TULLER, HL
单晶Ba0.03Sr0.97TiO3的电导率和热电功率在宽温度（800° C至1100°C）和氧分压（105至10 - 15 Pa）范围内测量。我们的实验数据，像那些以前的工人名义上未掺杂的钛酸钡或钛酸锶，支持基于双电离氧空位，电子，空穴和意外受主杂质的缺陷模型。电导率和热电功率的同时测量，再加上精确的实验数据与先进的热电功率测量技术，使我们能够确定第一次可靠的值的指前因子和活化能的缺陷平衡常数的特征。这些计算值和缺陷模型与实验数据非常吻合，并用于生成各种缺陷区域的边界inPo 2 - 1/Tspace。
The electrical conductivity and thermoelectric power of single‐crystalline Ba0.03Sr0.97TiO3were measured over a wide temperature (800° to 1100°C) and oxygen partial pressure (105to 10‐15Pa) range. Our experimental data, like those of previous workers on nominally undoped BaTiO3or SrTiO3, support a defect model based on doubly ionized oxygen vacancies, electrons, holes, and accidental acceptor impurities. The simultaneous measurement of electrical conductivity and thermoelectric power, together with precise experimental data obtained with an advanced thermoectric power measurement technique, enabled us to determine for the first time reliable values for the preexponential factors and the activation energies which characterize the defect equilibrium constants. These calculated values, together with the defect model, were found to give an excellent fit to the experimental data, and were used to generate the boundaries, inPo2‐1/Tspace, of the various defect regimes.