Probing and modeling of interfacial carrier motion in organic devices by optical second harmonic generation
Probing and modeling of interfacial carrier motion in organic devices by optical second harmonic generation
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DOI：
10.1116/1.3454371
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发表时间：
2010-07
期刊：
影响因子：
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通讯作者：
M. Iwamoto;T. Manaka;M. Weis;D. Taguchi
中科院分区：
文献类型：
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作者：
M. Iwamoto;T. Manaka;M. Weis;D. Taguchi
在这里，作者报告了一种新的光学二次谐波产生（SHG）的测量，允许载体运动在固体中被直接探测。通过捕捉入射电磁波（激光束）和运动载流子的直流电场耦合在固体中引起的非线性极化，实现了载流子运动的可视化。利用时间分辨二次谐波技术的实验揭示了并五苯场效应晶体管的二次谐波强度分布随沟道载流子输运的动态变化。所观察到的SHG强度分布强烈依赖于有机场效应晶体管沟道的物理条件，并且很好地解释了载流子陷阱对诸如二氧化硅（SiO2）和聚（甲基丙烯酸甲酯）的栅极绝缘体的影响。作者预计，使用时间分辨SHG的技术可以成为表征有机器件界面态的有力工具。
Here the authors report a novel optical second harmonic generation (SHG) measurement that allows carrier motion in solids to be probed directly. By catching nonlinear polarization induced in the solids by coupling with incident electromagnetic waves (laser beam) and dc electric field from moving carriers, carrier motion is visualized. Experiments making use of time-resolved SHG technique has revealed dynamic changes of SHG intensity profiles arising from pentacene field effect transistors in accordance with the carrier transport in the channel. The observed SHG intensity profiles are strongly dependent on the physical condition of the organic field effect transistors channel and well accounts for the effect of carrier traps on gate insulator such as silicon dioxide (SiO2) and poly(methyl methacrylate). The authors anticipate that a technique using time-resolved SHG can be a powerful tool to characterize interface states of organic devices.