NEW RED PAIR LUMINESCENCE FROM GAP
NEW RED PAIR LUMINESCENCE FROM GAP
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DOI：
10.1103/physrev.166.754
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发表时间：
1968-01-01
期刊：
影响因子：
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通讯作者：
CUTHBERT, JD
中科院分区：
文献类型：
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作者：
HENRY, CH;DEAN, PJ;CUTHBERT, JD
我们报告的光学实验表明，在掺杂Cd（或Zn）受体的GaP中，低温红色发光以两种方式产生：(a)由结合到涉及Cd（或Zn）和O的中性配合物上的电子重组，空穴被困在远处的Cd（或Zn）受体上，产生具有新性质的对光谱；(b)根据Morgan等人最近的报道，在这些复合物上结合的激子衰变。还讨论了提供激子-杂质络合物的对称轴、电子结构和化学特性信息的塞曼实验和同位素位移实验。利用激子发光衰减时间得出的振荡器强度，通过吸收测量估计了zn和cd掺杂GaP中中性配合物的浓度。
We report optical experiments showing that the low-temperature red luminescence in GaP doped with Cd (or Zn) acceptors arises in two ways:(a) from the recombination of electrons bound to neutral complexes involving Cd (or Zn) and O, with holes trapped at distant Cd (or Zn) acceptors producing pair spectra with novel properties;(b) from the decay of an exciton bound at these complexes, as recently reported by Morgan et al. Zeeman and isotopic shift experiments which provide information about the symmetry axis, electronic structure, and chemical identity of the exciton-impurity complex are also discussed. The concentrations of the neutral complexes in Zn-and Cd-doped GaP have been estimated from absorption measurements using oscillator strengths derived from the measured decay time of the exciton luminescence.