Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.
Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.
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DOI：
10.1103/physrevlett.116.016603
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发表时间：
2015-02
影响因子：
8.6
通讯作者：
S. Vélez;V. Golovach;A. Bedoya-Pinto;M. Isasa;E. Sagasta;M. Abadia;C. Rogero;L. Hueso;F. Bergeret;F. Casanova
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文献类型：
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作者：
S. Vélez;V. Golovach;A. Bedoya-Pinto;M. Isasa;E. Sagasta;M. Abadia;C. Rogero;L. Hueso;F. Bergeret;F. Casanova
我们报告的测量一种新型的磁电阻在铂和钽薄膜。由于Hanle效应，通过自旋霍尔效应在膜的表面处产生的自旋累积在磁场中减小，导致电阻增加，如Dyakonov [Phys. Rev. Lett. 99，126601（2007）]。这种磁阻的角度依赖性类似于最近在Pt/Y（3）Fe（5）O（12）双层膜中发现的自旋霍尔磁阻，尽管不需要铁磁绝缘体的存在。我们表明，这种Hanle磁电阻是一种替代的简单的方法来定量研究强自旋-轨道耦合的金属中的电荷和自旋电流之间的耦合。
We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.