OPTICAL RECTIFICATION AT SEMICONDUCTOR SURFACES
OPTICAL RECTIFICATION AT SEMICONDUCTOR SURFACES
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DOI：
10.1103/physrevlett.68.102
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发表时间：
1992-01-06
影响因子：
8.6
通讯作者：
LEVI, AFJ
中科院分区：
文献类型：
--
作者：
CHUANG, SL;SCHMITTRINK, S;LEVI, AFJ
我们证明，通过反弗朗茨-凯尔迪什效应或电场诱导的光学整流，可以在半导体表面附近的耗尽场中产生远红外辐射。这种机制在概念上与之前提出的机制不同，并且解释了许多最近的实验观察结果。
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.