Flexible Dual-Gate MoS2 Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes
Flexible Dual-Gate MoS2 Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes
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DOI：
10.1109/ted.2021.3076138
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发表时间：
2021-06-01
影响因子：
3.1
通讯作者：
Wan, Qing
中科院分区：
文献类型：
--
作者：
Chen, Chunsheng;He, Yongli;Wan, Qing
柔性神经形态设备对于新兴的感知和传感系统是非常期望的。在这里，多端神经形态设备的基础上独立的双栅MoS 2晶体管独立的质子导电壳聚糖膜的建议。壳聚糖膜同时用作载体和基底。通过对硅基底表面的复制，成功地将壳聚糖基底的粗糙度从11 nm降低到1.7 nm。此外，当电极间距为100 μ m时，膜在1.0 Hz下显示出1.3 μ F/cm（2）的大的比面内双电层电容。双栅MoS 2晶体管在柔性壳聚糖膜上表现出高的机械稳定性和电性能。一些重要的突触功能，如成对脉冲易化，可调高通滤波器，成功地模拟。此外，时空动态相关也被实验证明。我们的研究结果将极大地丰富二维柔性电子学和神经形态感知与传感系统的内涵。
Flexible neuromorphic devices are highly desirable for emerging perception and sensing systems. Here, multiterminal neuromorphic devices based on freestanding dual-gate MoS2 transistors on freestanding proton-conducting chitosan membranes are proposed. The chitosan membranes are simultaneously used as the dielectrics and substrates. By replicating the surface of silicon substrate, the roughness of chitosan substrate is successfully reduced from 11 to 1.7 nm. Besides, the membranes show a large specific in-plane electric-double-layer capacitance of 1.3 mu F/cm(2) at 1.0 Hz when the interelectrode space is 100 mu m. The dual-gate MoS2 transistors exhibit high mechanical stability and electrical performance on flexible chitosan membranes. Some important synaptic functions, such as paired-pulse facilitation, and tunable high pass filter, are successfully emulated. Furthermore, spatiotemporal dynamic correlation is also experimentally demonstrated. Our results will greatly enrich the intension of 2-D flexible electronics and neuromorphic perception and sensing systems.