CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
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DOI：
10.1109/ted.2009.2026523
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发表时间：
2009-09-01
影响因子：
3.1
通讯作者：
Nemirovsky, Yael
中科院分区：
文献类型：
--
作者：
Gitelman, L.;Stolyarova, S.;Nemirovsky, Yael
本文报道了CMOS-绝缘体上硅（SOI）-微机电系统（MEMS）晶体管的设计、制造工艺、CMOS后微加工和特性。本文报道的热隔离微机械CMOS-SOI-MEMS晶体管是为非制冷红外（IR）传感而设计的，在这里被称为“TMOS”。“测量的直流和噪声电特性的处理（处女）晶体管，以及后CMOS-MEMS处理晶体管（TMOS）的报告和比较。特别是，阈值电压的温度依赖性和亚阈值电流温度系数（TCC）的报告。结果表明，后CMOS-MEMS工艺不会降低晶体管的性能。的TMOS的电光性能的特点和报告。在TCC为4%-10%的量级的情况下，取决于栅极电压、40 mA/W的响应度、几十皮瓦量级的噪声等效功率以及64 mK量级的计算噪声等效温差，与现有技术相比，标准CMOS-SOI技术中的这种非冷却IR传感器可以以更低的成本提供高性能。现有技术的非冷却传感器基于在非CMOS材料如氧化钒或非晶硅中实现的测辐射热计。
This paper reports the design, fabrication technology, post-CMOS micromachining and characterization of CMOS-silicon-on-insulator (SOI)-microelectromechanical system (MEMS) transistors. The thermally isolated micromachined CMOS-SOI-MEMS transistor reported here is designed for uncooled infrared (IR) sensing and is dubbed here as "TMOS." The measured dc and noise electrical characteristics of the as-processed (virgin) transistor as well as those of the post-CMOS-MEMS-processed transistor (TMOS) are reported and compared. In particular, the threshold voltage temperature dependence and the temperature coefficient of current (TCC) at subthreshold are reported. The results indicate that the post-CMOS-MEMS processing does not degrade the performance of the transistors. The electrooptical performance of the TMOS is characterized and reported. With TCC on the order of 4%-10%, depending on the gate voltage, responsivity of 40 mA/W, noise equivalent power on the order of several tens of picowatts, and calculated noise equivalent temperature difference on the order of 64 mK, this uncooled IR sensor in standard CMOS-SOI technology may provide a high performance at a lower cost compared to state-of-the-art uncooled sensors based on bolometers implemented in non-CMOS materials like vanadium oxide or amorphous silicon.