Amorphous Silicon 3-D Tapers for Si Photonic Wires Fabricated With Shadow Masks
Amorphous Silicon 3-D Tapers for Si Photonic Wires Fabricated With Shadow Masks
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DOI：
10.1109/lpt.2008.927891
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发表时间：
2008-08
影响因子：
2.6
通讯作者：
A. Harke;T. Lipka;J. Amthor;O. Horn;M. Krause;J. Muller
中科院分区：
文献类型：
--
作者：
A. Harke;T. Lipka;J. Amthor;O. Horn;M. Krause;J. Muller
采用等离子体增强化学气相沉积氢化非晶硅制备了三维锥形结构，并利用全矢量模式求解器计算了相应的模式分布和沉积轮廓。锥形是用KOH蚀刻的Si晶片制成的荫罩制成的，并且用锥形将光从透镜光纤耦合到500 nm宽的光子线中。
Three-dimensional taper structures made from plasma-enhanced chemical vapor-deposited hydrogenated amorphous silicon were evaluated by calculating the deposition profiles with a line-of-sight model and the corresponding mode profiles with a full-vectorial mode solver. The tapers were fabricated with shadow-masks made from KOH-etched Si wafers, and with the tapers light was coupled into 500-nm-wide photonic wires from lensed fibers.