Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance
Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance
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DOI：
10.1063/1.3176480
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发表时间：
2009-07-13
影响因子：
4
通讯作者：
Arakawa, Yasuhiko
中科院分区：
文献类型：
--
作者：
Kitamura, Masatoshi;Arakawa, Yasuhiko
研究了沟道长度为2-10微米的底接触n沟道C-60薄膜晶体管的电流增益截止频率。采用图案化栅电极来减小TFT的寄生电容。通过直接测量栅极和漏极调制电流来估计截止频率。估计的截止频率随着信道长度的减小而一致地增加。对于沟道长度为2微米，饱和迁移率为1.11 cm(2)/V S的C-60TFT，获得了20.0 MHz的最大截止频率。
The current-gain cutoff frequency for bottom contact n-channel C-60 thin-film transistors (TFTs) with channel lengths of 2-10 mu m has been investigated. Patterned gate electrodes were adopted to reduce parasitic capacitance of the TFTs. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The estimated cutoff frequency increases consistently with reducing channel length. A maximum cutoff frequency of 20.0 MHz was obtained from a C-60 TFT with a channel length of 2 mu m and a saturation mobility of 1.11 cm(2)/V s.