High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
复制标题
宽带隙 ZnO 的高温强度和位错迁移率：与各种半导体的比较
DOI：
10.1063/1.2908193
复制
发表时间：
2008
影响因子：
3.2
通讯作者：
T. Taishi
中科院分区：
文献类型：
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作者：
I. Yonenaga;H. Koizumi;Y. Ohno;T. Taishi
采用压缩变形法研究了块状纤锌矿ZnO在高温下的机械强度。ZnO在650 ~ 850℃温度范围内的屈服应力约为10 ~ 20mpa，远低于GaN这种典型的宽带隙半导体的屈服应力。根据观察到的屈服应力的温度依赖性，推导出ZnO中位错在高温下运动的活化能为0.7 ~ 1.2 ev，这符合各种半导体中已知的位错运动的活化能与带隙能的关系。
The mechanical strength of bulk single crystal wurtzite ZnO was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnO in the temperature range of 650–850°C was found to be around 10–20MPa, i.e., extremely lower than that of GaN, a typical wide band-gap semiconductor. On the basis of the observed temperature dependence of yield stress, the activation energy for dislocation motion at elevated temperatures in ZnO is deduced to be 0.7–1.2eV, which follows the relation of activation energy for dislocation motion versus band-gap energy known in a variety of semiconductors.
塑性变形新引入的纤锌矿 ZnO 块状单晶中位错引起的发光
DOI：
--
发表时间：
2008
期刊：
Applied Physics Letters 92
影响因子：
--
作者：
Y. Ohno;H. Koizumi;T. Taishi;K. Fujii;H. Goto;T. Yao;I. Yonenaga
通讯作者：
I. Yonenaga