Optical characterization of GaN/SiC n-p heterojunctions and p-SiC
Optical characterization of GaN/SiC n-p heterojunctions and p-SiC
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GaN/SiC n-p 异质结和 p-SiC 的光学表征
DOI：
10.1063/1.120881
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发表时间：
1998
影响因子：
4
通讯作者：
J. Pankove
中科院分区：
文献类型：
--
作者：
J. Torvik;C. Qiu;M. Leksono;J. Pankove
对GaN/SiC异质结和p-SiC进行了光学表征，以解释GaN/SiC n-p异质结二极管的电流-电压（I-V）特性。的I-V特性表现出隧道辅助电流与低正向“导通”电压约1.15 V，而不是预期的漂移/扩散电流与导通约2.5 V。电致发光（EL）的测量这些二极管揭示了在1.25 eV的红外峰和在1.75 eV的红色峰。p-SiC上的光致发光（PL）测量在1.25和1.80 eV处产生峰值。由于6 H-SiC的带隙为3.03 eV，我们将EL和PL峰归因于从导带边缘到缺陷能级的辐射跃迁，随后下降到p-SiC的价带边缘。该缺陷能级位于价带边缘以上1.25 eV。
Optical characterization of GaN/SiC heterojunctions and p-SiC has been performed to explain the current–voltage (I–V) characteristics in GaN/SiC n-p heterojunction diodes. The I–V characteristics exhibit tunneling-assisted current with low forward “turn-on” voltages around 1.15 V as opposed to the expected drift/diffusion current with a turn on around 2.5 V. Electroluminescence (EL) measurements on these diodes revealed an infrared peak at 1.25 eV and a red peak at 1.75 eV. Photoluminescence (PL) measurements on p-SiC yielded peaks at 1.25 and 1.80 eV. Since the band gap of 6H–SiC is 3.03 eV, we attribute the EL and PL peaks to radiative transitions from the conduction band edge to a defect level and subsequently down to the valence band edge of p-SiC. This defect level is located 1.25 eV above the valence band edge.