Spin-Torque Oscillator Based on Magnetic Tunnel Junction with a Perpendicularly Magnetized Free Layer and In-Plane Magnetized Polarizer
Spin-Torque Oscillator Based on Magnetic Tunnel Junction with a Perpendicularly Magnetized Free Layer and In-Plane Magnetized Polarizer
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DOI：
10.7567/apex.6.103003
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发表时间：
2013-10-01
影响因子：
2.3
通讯作者：
Imamura, Hiroshi
中科院分区：
文献类型：
--
作者：
Kubota, Hitoshi;Yakushiji, Kay;Imamura, Hiroshi
我们制作了一个自旋扭矩振荡器（STO）具有纳米柱形的磁性隧道结与垂直磁化的FeB自由和面内磁化的CoFeB参考层。的FeB的垂直磁化稳定的强垂直磁各向异性诱导在MgO隧道势垒/FeB和FeB/MgO帽界面。在垂直场（3 kOe）下，STO同时具有大发射功率（0.55 μ W）、高频率（6.3GHz）和高Q值（135），是迄今为止纳米柱STO中最大的。用宏观自旋模型很好地解释了振荡特性与偏压的关系。(C)2013日本应用物理学会
We fabricated a spin-torque oscillator (STO) having a nanopillar-shaped magnetic tunnel junction with perpendicularly magnetized FeB free and in-plane magnetized CoFeB reference layers. The perpendicular magnetization of the FeB was stabilized by strong perpendicular magnetic anisotropy induced at both the MgO tunnel barrier/FeB and FeB/MgO cap interfaces. Under a perpendicular field (3 kOe), the STO exhibited a large emission power (0.55 mu W), a high frequency (6.3 GHz) and a high Q factor (135) simultaneously, all of which are the largest to date among nanopillar-shaped STOs. The bias voltage dependence of the oscillation property was well explained by the macrospin model. (C) 2013 The Japan Society of Applied Physics