Hot Carriers in Si and Ge Radiation Detectors
Hot Carriers in Si and Ge Radiation Detectors
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硅和锗辐射探测器中的热载流子
DOI：
10.1063/1.1659981
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发表时间：
1971
影响因子：
3.2
通讯作者：
J. Moll
中科院分区：
文献类型：
--
作者：
W. Drummond;J. Moll
硅和锗辐射探测器的特性是从热载流子能量损失机制的分析中得出的。载流子的行为描述的声子和电离散射率。使用凯恩的散射率表征，计算硅中电离概率与初级电子能量的关系，表明有效电离阈值是带隙能量的几倍。声子损失和载流子的剩余动能的计算相结合，以给出一个平均的能量消耗每创建对4.24 eV。与实验值3.67 eV更接近的协议是通过降低声子电离散射率比实现的。通过带隙的变化进入的温度效应计算为Δ ε/Δ Eg=1.73。分析还预测硅的Fano因子为0.059。对锗情况的讨论是基于热载流子行为类似于硅中的热载流子行为的前提。因为杰马纽...
Characteristics of silicon and germanium radiation detectors are developed from an analysis of the energy‐loss mechanisms for hot carriers. The carrier behavior is described in terms of phonon and ionization scattering rates. A calculation of the probability of ionization vs primary electron energy in silicon, using Kane's characterization of the scattering rates, indicates an effective ionization threshold several times the band‐gap energy. Calculations of phonon losses and the carriers' residual kinetic energies are combined to give an average energy expended per created pair e of 4.24 eV. Closer agreement with the experimental value of 3.67 eV is achieved by lowering the phonon to ionization scattering‐rate ratio. Temperature effects, which enter through changes in the band gap, are calculated to be ∂e/∂Eg=1.73. The analysis also predicts a Fano factor of 0.059 for silicon. Discussion of the germanium situation is based on the premise of hot‐carrier behavior similar to that in silicon. Because germaniu...