Monolithic silicon pixel detectors in SOI technology
Monolithic silicon pixel detectors in SOI technology
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DOI：
10.1016/j.nima.2005.04.035
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发表时间：
2005-09
影响因子：
1.4
通讯作者：
J. Marczewski;M. Caccia;K. Domanski;P. Grabiec;M. Grodner;B. Jaroszewicz;T. Klatka;A. Kociubiński;M. Koziel;W. Kucewicz;K. Kucharski;S. Kuta;H. Niemiec;M. Sapor;M. Szelezniak;D. Tomaszewski
中科院分区：
文献类型：
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作者：
J. Marczewski;M. Caccia;K. Domanski;P. Grabiec;M. Grodner;B. Jaroszewicz;T. Klatka;A. Kociubiński;M. Koziel;W. Kucewicz;K. Kucharski;S. Kuta;H. Niemiec;M. Sapor;M. Szelezniak;D. Tomaszewski
本文介绍了一种采用绝缘体上硅 (SOI) 技术制造的用于电离辐射的单片硅像素探测器。在这种新颖的器件中，传感器在高电阻 SOI 底部晶圆中实现，而相关的 CMOS 读出电路则构建在 SOI 器件层中。介绍了简单测试探测器的初步测量。他们证明探测器工作正常，显示出完全耗尽的硅探测器的典型灵敏度。
This paper describes a monolithic silicon pixel detector for ionizing radiation manufactured using the Silicon On Insulator (SOI) technology. In this novel device, the sensor is implemented in a high resistive SOI bottom wafer while the associated CMOS read-out circuits are built in a SOI device layer. Preliminary measurements of simple test detectors are presented. They prove that the detector is working properly showing the typical sensitivity of a fully depleted Silicon detector.