Enhancement in spin-dependent tunneling with Coulomb blockade
Enhancement in spin-dependent tunneling with Coulomb blockade
复制标题
通过库仑封锁增强自旋相关隧道效应
DOI：
10.1016/s0304-8853(98)01006-3
复制
发表时间：
1999
影响因子：
2.7
通讯作者：
S. Maekawa
中科院分区：
文献类型：
--
作者：
S. Takahashi;S. Maekawa
我们从理论上研究了两种类型的磁性纳米结构系统中的磁阻（MR）：单电子晶体管（SET）和绝缘颗粒铁磁体。在这两个系统中，由于电极或颗粒之间具有强库仑阻塞的自旋相关隧道的高阶过程，MR在低温下得到增强，并且增强的MR在较高电压下保持不变。 MR 的温度和偏置电压依赖性与最近在两个系统上进行的实验一致。
We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.