Tunable all epitaxial semimetal-semiconductor schottky diode system : ErAs on InAlGaAs
Tunable all epitaxial semimetal-semiconductor schottky diode system : ErAs on InAlGaAs
复制标题
可调谐全外延半金属半导体肖特基二极管系统：InAlGaAs 上的 ErAs
DOI：
10.1116/1.2013312
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发表时间：
2005
影响因子：
1.4
通讯作者：
A. Gossard
中科院分区：
文献类型：
--
作者：
J. Zimmerman;E. Brown;A. Gossard
我们报告了一种全外延半金属-半导体肖特基二极管材料系统的生长、制造和电学性能：在InAlGaAs上的ErAs。相干的、热力学稳定的、晶格匹配的界面消除了氧化物和界面第三相，使得肖特基势垒高度和相关的电学参数依赖于基本的分子键（例如，界面偶极子），而不是无意的外在影响。因此，ErAs:InAlGaAs二极管具有高度可调谐的特性；通过调整成分、掺杂和界面类型，肖特基势垒高度可从~ 100mev调节到~ 620meV，短路响应度可从0.5到19a / W调节，差分电阻可从103to1010Ωμm2调节，电容可从0.4到2ff / μm2调节。整流射频源已被证明高达20GHz。因此，InAlGaAs是一种非常有前途的材料系统，用于设计高毫米波、零偏置、平方律探测器，具有显着降低的本底噪声。
We report the growth, fabrication, and electrical properties of a fully epitaxial semimetal-semiconductor Schottky diode materials system: ErAs on InAlGaAs. The coherent, thermodynamically stable, lattice-matched interface eliminates oxide and interfacial third phases, making the Schottky barrier height and associated electrical parameters dependent on the fundamental molecular bonding (e.g., interface dipoles) rather than unintentional extrinsic effects. ErAs:InAlGaAs diodes thus have highly tunable properties; by adjusting composition, doping, and interface type, the Schottky barrier height is tunable from ∼100meVto∼620meV, short circuit responsivity is tunable from 0.5to19A∕W, differential resistance is tunable from 103to1010Ωμm2, and capacitance is tunable from 0.4to2fF∕μm2. Rectification of a rf source has been demonstrated up to 20GHz. ErAs:InAlGaAs is thus a very promising materials system for design of an upper mm-wave, zero-bias, square-law detector with a significantly reduced noise floor.